| PART |
Description |
Maker |
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HY53C256 HY53C256F HY53C256LF HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM
|
Hynix Semiconductor
|
| HY534256A HY534256AJ HY534256ALJ HY534256ALS HY534 |
256K x 4-bit CMOS DRAM
|
HYNIX[Hynix Semiconductor]
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KM44C258BJ-8 KM44C258BP-8 KM44C258BP-7 KM44C258BZ- |
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 70 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 80 ns, PZIP19
|
|
| MT4C4256 |
256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM)
|
Micron Technology, Inc.
|
| 29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD
DIODE SCHOTTKY 45V 2X20A TO247AD
MOSFET N-CH 500V 14A TO-247AD
Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32
MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| AAA2800 AAA2801 |
(AAA2800 Series) Static Column Decode Mode CMOS 256k x 1 DRAM
(AAA2800 Series) Page Mode CMOS 256k x 1 DRAM
|
NMB Technologies
|
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
